Interfacial effects due to tunneling to insulator gap states in amorphous carbon on silicon metal-insulator-semiconductor structures

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Abstract
Ac conductance and capacitance measurements over the range 10 Hz to 10 MHz for amorphous carbon on silicon metal‐insulator‐semiconductor structures are reported. Data can be interpreted as being due to tunneling of electrons into gap states located in the dielectric. Interface state densities as low as 1.3×1010 eV cm2 are found.