γ-Irradiation of High Purity p-Type Silicon with Special Reference to Single Vacancy
- 1 April 1965
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 20 (4) , 487-490
- https://doi.org/10.1143/jpsj.20.487
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Technique for Ohmic Connecting Leads to SiliconJournal of Applied Physics, 1962
- Silicon Divacancy and its Direct Production by Electron IrradiationPhysical Review Letters, 1961
- Vacancy Interactions in SiliconPhysical Review Letters, 1960
- Irradiation Damage in Germanium and Silicon due to Electrons and Gamma RaysJournal of Applied Physics, 1959
- Oxygen Content of Silicon Single CrystalsJournal of Applied Physics, 1957