Se Self-Diffusion in CdSe and the Defect Structure of the II-VI Compounds
- 21 November 1966
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 17 (21) , 1093-1095
- https://doi.org/10.1103/physrevlett.17.1093
Abstract
It has been found that the diffusion coefficient of Se in CdSe is inversely proportional to the Cd partial pressure for most of the CdSe solidus region. This simple relation implies interstitial Se as the diffusing defect. Other diffusion studies indicate that a similar situation prevails in all of the II-VI compounds.Keywords
This publication has 3 references indexed in Scilit:
- Diffusion of sulfur 35 in single crystals of lead sulfide as a function of stoichiometry and doping additionsJournal of Physics and Chemistry of Solids, 1965
- The Chemistry of Imperfect CrystalsPhysics Today, 1964
- Diffusion of Cd in CdSPhysical Review B, 1964