Lateral resurfed COMFET
- 7 June 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (12) , 519-520
- https://doi.org/10.1049/el:19840360
Abstract
A lateral resurfed COMFET structure is proposed. The conductivity of the drift region of the device is modulated as in the case of vertical COMFET. However, the maximum operating current and switching speed are expected to be several times that of the vertical structure because of the collection of excess minority carriers by the p−-substrate and the narrow width of the n− epitaxial layer.Keywords
This publication has 3 references indexed in Scilit:
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