Excitation mechanisms and excited states of the I1 bound exciton in CdS

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Abstract
For the neutral‐acceptor‐bound exciton emission (I1) of CdS three new excitation lines with light E ⟂ c are found at 1.2, 2.5, and 3.7 meV on the high energy side of the I1 line. The nearest one is interpreted as due to the simultaneous excitation of the bound exciton and a transverse‐acoustic phonon. The other two are understood as the direct creation of the I1 bound exciton in excited states with one of the equal holes belonging to a higher configuration. With light E ‖ c the excitation mechanisms via the free exciton states AL and AF and the bound exciton states I1B and I1B are discussed. An excitation intensity dependent energy shift of the long wavelength tail of the band edge is reported for the first time.