High refractive index difference and low loss optical waveguide fabricated by low temperature processes

10 June 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (12) , 1123-1124
https://doi.org/10.1049/el:19930749

Abstract

A singlemode optical waveguide has been developed with a high refractive index difference Δ of 2% and low loss of 0.12 dB/cm at 1.3 μm wavelength. This waveguide consists of buffer layer, core ridge, and cladding layer of SiO_xN_yH_x formed by the plasma CVD method at a low temperature of 270°C. The absorption loss which is affected by the OH ion content at 1.39 μm wavelength can be decreased by annealing at 500°C under N₂ atmosphere. The fabrication process at low temperature is effectively used for the monolithic integration of photonic/electronic circuits.

Keywords

HIGH REFRACTIVE INDEX DIFFERENCE
1.39 MICRON
MONOLITHIC INTEGRATION
CORE RIDGE
OH ION CONTENT
MODE MATCHING TECHNOLOGY
LOW TEMPERATURE PROCESSES
270 DEGC
SIOXNYHZ
PHOTONIC/ELECTRONIC CIRCUITS
ANNEALING
SINGLEMODE OPTICAL WAVEGUIDE
CLADDING LAYER
BUFFER LAYER
LOW LOSS
1.3 MICRON
ABSORPTION LOSS
PLASMA CVD

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