High power pulsed avalanche diode oscillators for microwave frequencies
- 1 July 1967
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 55 (7) , 1227-1228
- https://doi.org/10.1109/PROC.1967.5806
Abstract
This letter describes the pulsed operation of large area silicon p-n junction avalanche diode oscillators. At X-band 30 watts were obtained and at 21 GHz, 8.8 watts.Keywords
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