The effect of rare-earth impurities on the oxidation resistance of chromium

Abstract
A systematic study has been made of the effects of Group III and rare-earth impurities on the thermal oxidation of chromium. The elements were introduced by ion-implantation to depths of about 30 nm with doses in the range 5 x 10 14 to 5 x 10 16 ions cm -2 . A number of the samples were annealed after implantation, to eliminate effects arising from radiation damage, and were subsequently oxidized for 30 min in dry oxygen at 750 °C. Impurity distributions were determined both before and after oxidation by means of Rutherford back-scattering of a particles, to correlate oxidation effects with the migration of impurities. Comparison of the oxygen uptake for the variously implanted samples was made by using deuteron bombardment and the 16 O (d, p) 17 O and 16 O (d, p) 17 O* nuclear reactions. Impurity analysis was carried out also by using a Cameca ion microprobe analyser. Initial studies designed to eliminate the effects of radiation damage, involving the implantation of Cr+ ions over a range of doses and energies, indicated that annealing at 750 °C was necessary to overcome the effects of bombardment-induced damage.

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