A comparative study of the light-induced defects in intrinsic amorphous and microcrystalline silicon deposited by remote plasma enhanced chemical vapor deposition

1 January 1991

proceedings article
Published by AIP Publishing in AIP Conference Proceedings

Vol. 234 (1) , 211-217
https://doi.org/10.1063/1.41030

Abstract

This paper discusses the deposition of microcrystalline silicon, μc‐Si, by the remote plasma enhanced chemical vapor deposition process. We discuss the deposition process, and the properties of undoped and doped μc‐Si thin films. We emphasize the properties of an ‘‘intrinsic’’ μc‐Si thin films material that is obtained by light boron doping. The properties of this material, in particular its effective band‐gap of 1.44 eV, its relatively high photoconductivity and its undetectable Staebler‐Wronski degradation make it a candidate material for the i‐layer photo‐active constituent of p‐i‐n PV devices.

Keywords

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