Optically enhanced oxidation of semiconductors

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Abstract
An increase in the oxidation rate of Si has been observed during thermal oxidation accompanied by optical excitation with visible laser light. The enhancement of the oxidation rate is approximately 60%, and is believed to arise from two sources: simple heating by the laser beam, and a direct nonthermal effect of the laser light. The calculated temperature rise is not large enough to fully account for the observed rate increase, and the experimental data are in agreement with calculations based upon a model of optical carrier generation and resultant bond breaking in the Si near the Si–SiO2 interface. An increase in oxidation rate has also been observed in GaAs and InP. The degree of enhancement obtained in these materials is greater than in Si, and provides further evidence of a nonthermal optically-excited process. The GaAs oxide contains a relatively high As2O3 concentration (∠10%) near the outer surface.

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