4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures

This publication has 5 references indexed in Scilit:

• Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors
  IEEE Electron Device Letters, 1997
• 1.1 kV 4H-SiC power UMOSFETs
  IEEE Electron Device Letters, 1997
• 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's)
  IEEE Electron Device Letters, 1997
• Analysis of polarization anisotropy along the c axis in the photoluminescence of wurtzite GaN
  Applied Physics Letters, 1997
• High-voltage double-implanted power MOSFET's in 6H-SiC
  IEEE Electron Device Letters, 1997