Electroreflectance Spectrum of CdTe 1-xSx Mixed Crystal Layer in CdS/CdTe Thin-Film Solar Cell
- 1 August 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (8A) , L916-918
- https://doi.org/10.1143/jjap.37.l916
Abstract
The electroreflectance (ER) spectrum of the CdS/CdTe thin-film solar cell has been studied in conjunction with the results on the atomic element depth profile. The ER spectrum occurs with three spectral components with optical transition energies of 1.44 eV, 1.47 eV and 1.49 eV at 293 K. The mixed crystal layer of CdTe1-x Sx, ∼2 µm thick (x>0.004), extends from the CdS/CdTe metallurgical interface into the CdTe layer, and the n–p junction locates in the mixed crystal layer. The dominant 1.47-eV ER component is assigned to the band gap of the mixed crystal layer of CdTe0.95S0.05 at around the n–p junction.@keyword CdTe1- x S x , CdS/CdTe solar cell, mixed crystal, electroreflectance, SIMS, n–p junctionKeywords
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