GaAs gigabit logic circuits using normally-off m.e.s.f.e.t.s
- 24 April 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (9) , 315-316
- https://doi.org/10.1049/el:19800226
Abstract
Normally-off GaAs m.e.s.f.e.t. logic circuits fabricated by electron beam lithography have exhibited excellent high speed switching characteristics. The highest switching speed evaluated from a 15-stage ring oscillator is 30 ps per gate with a power dissipation of 1.9 mW. Binary frequency dividers have been fabricated with D-type flip-flops operating up to 3 GHz. A divide-by-eight counter has also operated at 2.5 GHz.Keywords
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