A gas-sensitive field effect transistor utilizing a thin film of lead phthalocyanine as the gate material
- 1 July 1987
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 151 (1) , L111-L113
- https://doi.org/10.1016/0040-6090(87)90017-4
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Gas-induced electrical conductivity changes in metal phthalocyaninesSensors and Actuators, 1986
- Electronic devices incorporating stable phthalocyanine Langmuir-Blodgett filmsThin Solid Films, 1985
- A vapor-sensitive chemiresistor fabricated with planar microelectrodes and a Langmuir-Blodgett organic semiconductor filmIEEE Transactions on Electron Devices, 1985
- A highly sensitive NO2 sensor based on electrical conductivity changes in phthalocyanine filmsSensors and Actuators, 1984
- Use of thin films of conjugated organic macrocycles as the active elements in toxic-gas sensors operating at room temperatureJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1984
- Electron donor–acceptor interactions and surface semiconductivity in molecular crystals as a function of ambient gasJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1980
- The effect of gases on the conductive properties of organic semiconductorsJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1972