Optically Induced Localized Paramagnetic States in Amorphous Semiconductors
- 8 March 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 36 (10) , 543-547
- https://doi.org/10.1103/physrevlett.36.543.2
Abstract
In addition to the previously reported paramagnetic hole center localized on the chalcogen, a conjugate optically induced electron center localized on an As atom is observed in glassy and . The chalcogen center is further identified as a hole localized in a nonbonding orbital. These optically induced centers are unique to the amorphous phase, and their density saturates at or below spins/.
Keywords
This publication has 12 references indexed in Scilit:
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- Densities of valence states of amorphous and crystalline , , and : X-ray photoemission and theoryPhysical Review B, 1975
- Optically Induced Localized Paramagnetic States in Chalcogenide GlassesPhysical Review Letters, 1975
- Magnetic resonance spectra in polycrystalline solidsChemical Reviews, 1975
- Photoluminescence in single-crystal chalcogenides in the system As2Se3-xSxJournal of Physics C: Solid State Physics, 1974
- Photoluminescence excitation spectra in amorphous: As 2 S 3 , As 2 Se 3 and seleniumPhilosophical Magazine, 1974
- Photoluminescence in amorphous As2S3Journal of Physics C: Solid State Physics, 1973
- Radiative recombination in amorphous As2Se3Physica Status Solidi (a), 1973
- Photoemission Measurements of the Valence Levels of Amorphous SiPhysical Review Letters, 1971
- Reply to “Structure of Trapped-Hole Centers in γ-Irradiated Borate Glasses”The Journal of Chemical Physics, 1970