Low Pressure OMVPE Growth of GaAs Using a Solid Elemental Arsenic Source and TEG

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Abstract
A new low pressure process for the growth of using triethylgallium (TEG) and a solid elemental arsenic source has been demonstrated. epitaxial layers with specular surface morphology have been obtained. N‐type background free carrier concentrations on the order of with room temperature mobilities around 4500 cm2/V/s are measured in these samples. The ability to grow epi layers with good surface morphology using a solid elemental arsenic source makes it more acceptable as a relatively safe industrial production process.