An electronic structure for a-ZnSe

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Abstract
Some electrical and optical properties for a-ZnSe have been studied and the results have been analysed in a consistent manner with the help of a Mott-type model for an amorphous semiconductor. Mature samples are reproducible and for these an energy level scheme is obtained. Many experiments are required to characterize an amorphous material and hence we have presented the results for dc conductivity, photoconductivity, optical absorption, thermoelectric power, ac conductivity, and drift mobility experiments for this material. a-ZnSe is n-type, with the Fermi level near the middle of the mobility gap. Drift mobilities are dispersive and have values of the order of 10−6 cm2 V−1 s−1 at room temperature.

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