In-plane optical anisotropy of GaAs/AlAs multiple quantum wells probed by microscopic reflectance difference spectroscopy

Abstract
We present a technique, microscopic reflectance difference spectroscopy (μRDS), for the measurement of optical anisotropy with sub‐micron resolution. The technique is applied to the determination of the in‐plane anisotropy of GaAs/AlAs multiple quantum well structures in a phase resolved way, both below and above the fundamental gap. Confinement and local field effects are discussed, and a comparison is made with microscopic calculations based on a tight‐binding Hamiltonian for the electronic states.

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