On the scaling of Si-MESFETs

1 December 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 1 (12) , 259-262
https://doi.org/10.1109/edl.1980.25312

Abstract

This letter discusses some options in scaling Si-MESFETs and compares them to the scaling of MOSFETs with the aid of a scaling table based on first order device equations.

Keywords

MOSFETS
THRESHOLD VOLTAGE
CAPACITANCE
INTRUSION DETECTION
MESFETS
DIODES
TRANSCONDUCTANCE
CHARGE COUPLED DEVICES
SPACE CHARGE
EQUATIONS

This publication has 0 references indexed in Scilit: