Cation Ni) diffusion in epitaxial films
- 28 May 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 64 (22) , 2675-2678
- https://doi.org/10.1103/physrevlett.64.2675
Abstract
The diffusion of has been measured in epitaxial thin films on (100) substrates in the 550–650 °C range (orthorhombic phase) in pressure of 1 bar, keeping δ in the 0.3–0.4 range. The diffusion behavior is described by D=1.3 exp[(-2.7 eV)/kT] /sec and is many orders of magnitude slower than anion (oxygen) diffusion reported in the literature. A diffusion mechanism involving thermal vacancies and atomic jumps in diagonal directions of the type 〈110〉, 〈301〉, and 〈031〉 is proposed for long-range diffusion of cations occupying the Cu sites.
Keywords
This publication has 15 references indexed in Scilit:
- Epitaxial Y1Ba2Cu3O7−y/Y1−xPrxBa2Cu3O7−y heterostructuresApplied Physics Letters, 1990
- Tracer diffusion of oxygen inPhysical Review B, 1989
- High-temperature superconductivity in tetragonal perovskite structures: Is oxygen-vacancy order important?Physical Review Letters, 1988
- The microstructure of YBa2Cu3O7-x thin films on SrTiO3 substratePhilosophical Magazine Part B, 1988
- Oxygen ordering and the orthorhombic-to-tetragonal phase transition inPhysical Review B, 1987
- Effects of radiation damage in ion-implanted thin films of metal-oxide superconductorsApplied Physics Letters, 1987
- Critical-current measurements in epitaxial films of compoundPhysical Review Letters, 1987
- On the direct measurement of diffusion at temperatures less than 0.5 TmThin Solid Films, 1975
- Cation Self-Diffusion and Semiconductivity in NiOThe Journal of Chemical Physics, 1970
- Isotope Effect for Cation Self-Diffusion in CoO CrystalsPhysical Review B, 1969