Method to calculate substrate temperature during intermittent radiant heating in vacuum

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Abstract
We have developed a method to determine the time dependent temperature of intermittently radiation-heated substrates for epitaxial growth of Si in ultrahigh vacuum. The method is particularly useful during the time intervals of growth when a pyrometer cannot be relied on, e.g., due to light reflection from the substrate surface. The use of a thermocouple is not possible due to slow response and risk for contamination. The model has been derived by applying Stefan–Boltzmann’s law and the fact that heat radiation is the dominating energy transport mechanism in the studied system for the actual substrate temperatures and time constants. The vertical temperature gradient through the substrate was estimated to be at most of the order of 100 K m−1.

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