Low temperature thermal annealing of arsenic implanted silicon
- 31 July 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (16) , 614-615
- https://doi.org/10.1049/el:19800426
Abstract
The annealing of heavily arsenic implanted (100) silicon using low temperature furnace techniques to obtain metastable concentrations of the dopant is described and the activations obtained are compared with those found after laser and electron beam annealing.Keywords
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