Effect of hydrogen-isotope implantation on aluminum oxide tunnel-junction barriers
- 1 November 1983
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (9) , 4970-4975
- https://doi.org/10.1103/physrevb.28.4970
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Thermal and voltage annealing of water infused tunnel junctionsApplications of Surface Science, 1982
- Effects of barrier preparation on inelastic electron tunnelingPhysical Review B, 1982
- Annealing effects in tunnel junctions (voltage annealing)Journal of Applied Physics, 1980
- Annealing effects in tunnel junctions (thermal annealing)Journal of Applied Physics, 1979
- Inelastic electron tunneling spectroscopy. experiments on external doping of tunnel junctions by an infusion techniqueApplications of Surface Science, 1978
- Electron tunneling spectroscopy—External doping with organic moleculesApplied Physics Letters, 1977
- The nature of the oxide barrier in inelastic electron tunneling spectroscopySurface Science, 1977
- Inelastic electron-tunneling study of barriers grown on aluminumPhysical Review B, 1976
- Inelastic Electron Tunneling in Al-Al-Oxide-Metal SystemsPhysical Review B, 1969
- Molecular Vibration Spectra by Inelastic Electron TunnelingPhysical Review B, 1968