Observation of heavy-hole and light-hole excitons in InGaAs/InAlAs MQW structures at room temperature

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Abstract
Heavy-hole and light-hole excitons were clearly observed at room temperature in the InGaAs/InAlAs MQW structure for the first time. The observed values of the exciton peak energy agree well with the calculated values. The halfwidth of the photoluminescence spectrum of MQW wafers is as narrow as 470 Å (25 meV) at room temperature, which is only 57% of that (970 Å, 44 meV) of the undoped bulk InGaAs layer.