A new electric field effect in silicon solar cells
- 1 October 1973
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (10) , 4785-4787
- https://doi.org/10.1063/1.1662040
Abstract
The phenomenon of high‐resistivity silicon solar cells manifesting high open‐circuit voltages previously observed only for cells made from low‐resistivity silicon is shown to be caused by the presence of a shallow diffused region at the back surface of the cell. The basic cell structure is either n+, p, p+ or p+, n, n+. The high open‐circuit voltage arises from the injection and accumulation of excess majority carriers in the bulk upon illumination or application of forward bias to the structure. A working model for the cell, designated a back surface field (BSF) cell, is described, and recent developments are cited.This publication has 2 references indexed in Scilit:
- Drift fields in photovoltaic solar energy converter cellsProceedings of the IEEE, 1963
- Fabrication and Characteristics of Phosphorous-Diffused Silicon Solar CellsJournal of the Electrochemical Society, 1962