Write, erase and storage times in nanocrystal memories and the role of interface states
- 22 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystalsJournal of Applied Physics, 1998
- Kinetic modelling of electron tunneling processes in quantum dots coupled to field-effect transistorsSuperlattices and Microstructures, 1998
- Room temperature operation of a quantum-dot flash memoryIEEE Electron Device Letters, 1997
- A Silicon Single-Electron Transistor Memory Operating at Room TemperatureScience, 1997
- Single-electron memoryJournal of Applied Physics, 1994