An accurate model of subbreakdown due to band-to-band tunneling and its application

6 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 26-29
https://doi.org/10.1109/iedm.1988.32741

Abstract

The authors describe a novel accurate model and numerical analysis of subbreakdown phenomena due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Subbreakdown I-V characteristics are calculated for various oxide thicknesses. The results agree with experimental results over a wide range of subbreakdown current from 10/sup -12/ A to 10/sup -6/ A. The numerical analysis based on this model has been utilized to suppress the subbreakdown current. It is concluded that the model can be utilized for the design of thin-gate-oxide devices.<>

Keywords

TUNNELING
VOLTAGE
IMPURITIES
ELECTRONS
ULTRA LARGE SCALE INTEGRATION
NUMERICAL MODELS
NUMERICAL ANALYSIS
ELECTRIC BREAKDOWN
MOSFET CIRCUITS
MOS DEVICES

This publication has 1 reference indexed in Scilit:

Zener tunneling in semiconductors
Journal of Physics and Chemistry of Solids, 1960