Analysis of Current Flow in a Planar Junction Diode at a High Forward Bias
- 1 July 1958
- journal article
- electronics section
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 5 (1) , 1-14
- https://doi.org/10.1080/00207215808953882
Abstract
A new approach is made to the analysis of high-injection-level current How in a p-n junction diode with planar geometry. The analysis is concerned with the general case of an asymmetric diode, the impurity concentrations and widths on both sides being arbitrary. It is shown that with certain simplifying assumptions the following voltage-current relation is obtained : I ½ =.S( V–V0), where the coefficient S is given quantitatively as a function of the physical and geometrical parameters of the diode and V o is the equilibrium diffusion potential of the junction.Keywords
This publication has 3 references indexed in Scilit:
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- The Forward Characteristic of the Pin DiodeBell System Technical Journal, 1956
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949