High-sensitivity plasma-based sputtered neutral mass spectrometry depth profiling of zinc-implanted GaAs

1 January 1989

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology A

Vol. 7 (1) , 17-20
https://doi.org/10.1116/1.575759

Abstract

A commercial sputtered neutral mass spectrometer, using a rf-generated plasma for both sputtering and postionization of sputtered particles, has been modified to improve sensitivity for trace analysis. The modified instrument has been used to depth profile zinc-implanted gallium arsenide. A detection limit of 20 ppma was attained for zinc under conditions of maximum depth resolution from an analyzed sample area of 0.2 cm2 with a useful yield of 5 to 7×10−10 . The results have been compared with those of secondary ion mass spectrometry. Sputtered neutral mass spectrometry (SNMS) depth profiles revealed zinc redistribution in one heavily implanted sample, leading to the discovery of unusual structural damage through transmission electron microscopy. This investigation is discussed as an example of the usefulness of the SNMS technique in practical applications.

Keywords

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