Effect of ferroelectric polarization on insulated-gate thin-film transistor parameters
- 30 June 1966
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (6) , 657-661
- https://doi.org/10.1016/0038-1101(66)90010-4
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- External habit modification and ferroelectric properties of tgsJournal of Physics and Chemistry of Solids, 1964
- Switching properties of biased ferroelectric colemaniteSolid-State Electronics, 1963