Comparison of 6H-SiC and 4H-SiC high voltage planar ACCUFETs
- 27 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- The planar 6H-SiC ACCUFET: a new high-voltage power MOSFET structureIEEE Electron Device Letters, 1997
- High-voltage double-implanted power MOSFET's in 6H-SiCIEEE Electron Device Letters, 1997
- Improved oxidation procedures for reduced SiO2/SiC defectsJournal of Electronic Materials, 1996
- Planar edge termination for 4H-silicon carbide devicesIEEE Transactions on Electron Devices, 1996
- Power semiconductor devices for variable-frequency drivesProceedings of the IEEE, 1994