Refinements in the measurement of depleted generation lifetime
- 1 October 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 30 (10) , 1274-1277
- https://doi.org/10.1109/t-ed.1983.21286
Abstract
Constant capacitance measurement of bulk generation lifetime using MOS capacitors with a typical desktop computer controlled interface bus measurement system is shown to be practical for medium-and high-lifetime silicon. Refinements to the basic technique are developed to deal with surface generation, diffusion from the neutral bulk, and generation in the lateral surface depletion region.Keywords
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