Low-resistance ohmic contacts to p -InP

19 August 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (17) , 755-756
https://doi.org/10.1049/el:19820511

Abstract

A new method for making low-resistance ohmic contacts to p-InP is described. Using layer-by-layer evaporated Au-Zn (25 wt% net Zn)/Cr/Au metallisation, specific contact resistance as low as 4.5 × 10⁻⁵ Ωcm² was obtained for p-InP with carrier concentration 2 × 10¹⁸ cm⁻³. The effects of annealing temperature and time on the contact resistances were investigated.

Keywords

LOW-RESISTANCE OHMIC CONTACTS
P-INP
CARRIER CONCENTRATION
SEMICONDUCTOR
ANNEALING TEMPERATURE EFFECTS
AU-ZN-CR-AU METALLISATION
CONTACT RESISTANCE

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