Transient 2-dimensional simulation of a submicrometre gate-length m.e.s.f.e.t.
- 16 October 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (21) , 519-521
- https://doi.org/10.1049/el:19750400
Abstract
The large-signal transient step response of a 0.4 μm-gate-length GaAs m.e.s.f.e.t. has been computed with a full 2-dimensional simulation. The falltime is saturated drift velocity limited. Details of this transient calculation and the use of a higher order [O(h4)] finite-element method are described.Keywords
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