Temperature dependence of gain characteristics in 1.3-/spl mu/m AlGaInAs/InP compressively strained multiple quantum well semiconductor lasers
- 1 January 1997
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (10928081) , 136-137 vol.2
- https://doi.org/10.1109/leos.1997.645308
Abstract
Summary form only given. So far 1.3 /spl mu/m AlGaInAs-InP strained MQW lasers have achieved high characteristic temperature T/sub 0/ of 120 K and high operating temperature of 185 C. In this paper, we evaluated temperature dependence of the gain characteristics in AlGaInAs-InP lasers, and found that the high T/sub 0/ was caused by the smaller temperature dependence of the spontaneous emission efficiency than that of GaInAsP-InP lasers.Keywords
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