Calculation of thermal noise in j.f.e.t.s
- 1 January 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Journal on Solidstate and Electron Devices
- Vol. 3 (5) , 137-141
- https://doi.org/10.1049/ij-ssed.1979.0029
Abstract
At frequencies above the range at which low-frequency-generation noise is dominant, thermal noise in the channel is the main noise source of a junction field-effect transistor. Starting from the well known current and continuity equations, the drain- and gate-noise spectra and their correlation coefficient are calculated by means of a series expansion, in a second-order approximation. The results are compared with calculations and measurements of other authors. There is good agreement with experiments, but differences exist with some of the earlier computations in the literature.Keywords
This publication has 1 reference indexed in Scilit:
- An Accurate Noise Analysis in MESFET Including Hot Carrier EffectsPublished by Springer Nature ,1978