Extended cavity ridge waveguide lasers operatingat 1.5 µm using a simpledamage induced quantum well intermixing process

6 November 1997

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 33 (23) , 1957-1958
https://doi.org/10.1049/el:19971310

Abstract

The authors report extended cavity ridge waveguide lasers in InGaAs/InGaAsP, intermixed by damage induced via a silica sputtering process, with selective intermixing achieved through photoresist masking. Laser threshold currents indicate passive waveguide losses of 4.4 cm^–1.

Keywords

This publication has 4 references indexed in Scilit:

Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum-well intermixing
IEEE Photonics Technology Letters, 1997
Monolithic integration in InGaAs-InGaAsP multiple-quantum-well structures using laser intermixing
IEEE Journal of Quantum Electronics, 1997
Quantum-well laser with integrated passive waveguide fabricated by neutral impurity disordering
IEEE Photonics Technology Letters, 1992
Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers
IEEE Journal of Quantum Electronics, 1985