Improvement in GaAs MESFET performance due to piezoelectric effect
- 1 November 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (11) , 2314-2318
- https://doi.org/10.1109/T-ED.1985.22276
Abstract
This paper describes the possibility of improving the performance of GaAs MESFET's by using piezoelectric effects. It is shown that piezoelectric charges, induced in the FET channel region due to the stressed dielectric overlayer, can be used to compensate for the deep tail of carrier distribution in the channel region. As a result, transconductance of short-channel GaAs FET's can be improved with a smaller shift in threshold voltage. The experimental results obtained for WSix- gate self-aligned MESFET's are qualitatively in good agreement with the theoretical values.Keywords
This publication has 0 references indexed in Scilit: