Electric Field Induced Memory Switching in Thin Films of the Chalcogenide System Ge–As–Se
- 1 October 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (7) , 221-223
- https://doi.org/10.1063/1.1653894
Abstract
A bistable switching has been observed in amorphous films of semiconducting glasses in the system Ge–As–Se in the thickness range 0.3–3 μm. The absence of a heat‐induced devitrification and energy production considerations for switching showed that Joule heat produced while switching plays only a minor role in these glasses. Hence, the observed memory action has been attributed to an electric field induced phase transition along a filamentary path in the glass film.Keywords
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