Transport in the Ferromagnetic Semiconductor Gd[sub 3−x]v[sub x]S[sub 4]

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Abstract
The transport properties of single crystal ferromagnatic Gd 3− x v x S 4 , where v denotes vacancies and x is near 1/3, are interpreted in terms of the concept of localization of electron states first suggested for paramagnetic Ce 3− x v x S 4 by Cutler and Mott and extended here to include magnetic interactions.

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