Efficient modeling of thyristor static characteristics from device fabrication data

1 February 1979

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 26 (2) , 143-147
https://doi.org/10.1109/T-ED.1979.19392

Abstract

A method for determination of the dc characteristics of an n-p-n-p structure is described. Each of the three diffused regions is first of all characterized by computer analysis using the variable boundary regional approach at one low-bias value (mobility variation with doping level and high doping bandgap reduction effects are included in this program). A set of constants thus obtained is used to define a set of simplified analyticI-Vrelations for each of the four regions. These analytic relations are solved using an elementary program to predict theI-Vcharacteristics. Experimental and computed results are included for normal and gold-doped devices and explanations for operation with extreme (low- and high-) lifetime values are given.

Keywords

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