Measurements of current transport in metal/Si1−xGex Schottky diodes

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Abstract
Schottky contacts formed by Al/Si1−xGex and Pd/Si1−xGex, with x=0.17 and 0.20, have been investigated by using current–voltage–temperature analysis. The Schottky barrier height varied with Al and Pd as the Schottky metal. The current transport mechanism was strongly affected by 550 °C annealing. In as-deposited samples, thermionic emission and field emission combined as the conduction mechanism. After 550 °C annealing, thermionic emission is the dominant mechanism. The barrier height, φB, was also found to decrease with the increase of germanium composition for the two used samples. X-ray diffraction was utilized to study the substrate crystal quality versus processing. The variation of surface crystal structure and stress with processing temperature was observed.

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