An Efficient Impact Ionization Model For Silicon Monte Carlo Simulation

Publisher Website

24 August 2005

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 42-43
https://doi.org/10.1109/vpad.1993.724715

Abstract

No abstract available

Keywords

This publication has 8 references indexed in Scilit:

Impact ionization in semiconductors: Effects of high electric fields and high scattering rates
Physical Review B, 1992
A many-band silicon model for hot-electron transport at high energies
Solid-State Electronics, 1989
Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
Physical Review B, 1988
Quantum yield of electron impact ionization in silicon
Journal of Applied Physics, 1985
Electron drift velocity in silicon
Physical Review B, 1975
Measurement of the ionization rates in diffused silicon p-n junctions
Solid-State Electronics, 1970
High-Resolution Method for Calculating Spectra of Solids
Physical Review Letters, 1969
Electron Scattering by Pair Production in Silicon
Physical Review B, 1967