Growth of AlN and GaN on 6H–SiC(0001) using a helium supersonic beam seeded with ammonia
- 8 September 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (10) , 1365-1367
- https://doi.org/10.1063/1.119895
Abstract
We have grown AlN and GaN layers on 4° off-axis 6H–SiC (0001) substrates using He supersonic beams seeded with NH3. The AlN films were used as buffer layers for GaN growth at 800°C. We estimate 39% incorporation of the NH3 molecules impinging on the substrate surface during GaN film growth. High structural quality of the epitaxial GaN layers was confirmed by transmission electron microscopy and electron channeling patterns. The GaN films, which had a thickness of ∼105 nm, contained a defect density of ∼2×1010 cm−2.Keywords
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