Plasmon energy loss analysis of epitaxial layers in silicon and germanium
- 31 December 1976
- journal article
- Published by Elsevier in Micron (1969)
- Vol. 7 (2) , 133-140
- https://doi.org/10.1016/0047-7206(76)90056-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Electron energy loss studies of polymers during radiation damagePhilosophical Magazine, 1973
- The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniquesJournal of Crystal Growth, 1971
- Carbide Contamination of Silicon SurfacesJournal of Applied Physics, 1971
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviourPhilosophical Magazine, 1967
- An energy analysing electron microscopeJournal of Scientific Instruments, 1966
- Method of preparing Si and Ge specimens for examination by transmission electron microscopyBritish Journal of Applied Physics, 1962