Varistor effect in semiconductor ferroelectrics
- 1 December 1997
- journal article
- Published by Pleiades Publishing Ltd in Technical Physics
- Vol. 42 (12) , 1390-1394
- https://doi.org/10.1134/1.1258883
Abstract
This paper treats the effect of an external field on the magnitude of potential barriers and the potential contour near a charged boundary between crystallites in polycrystalline ferroelectric semiconductors. It is shown that this effect depends on the mutual directions of the external field and the polarization in the ferroelectric bulk, and that the appearance of various types of nonlinear dependences of the current on voltage in polycrystalline ferroelectrics can be explained by the transfer of charge carriers in the fields of potential barriers with different profiles.Keywords
This publication has 3 references indexed in Scilit:
- Current-voltage characteristics of donor-doped BaTiO3semiconducting ceramicsJournal of Physics D: Applied Physics, 1989
- Current-Voltage Characteristics of Semiconducting Barium Titanate CeramicJournal of Applied Physics, 1968
- Resistivity Anomaly in Doped Barium TitanateJournal of the American Ceramic Society, 1964