Deep submicron nitrided-oxide CMOS technology for 3.3-V operation
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Inversion layer mobility under high normal field in nitrided-oxide MOSFETsIEEE Transactions on Electron Devices, 1990
- Guidelines for reverse short-channel behaviorIEEE Electron Device Letters, 1989
- Improved transconductance under high normal field MOSFETs with ultrathin nitrided oxidesIEEE Electron Device Letters, 1989
- A framework to evaluate technology and device design enhancements for MOS integrated circuitsIEEE Journal of Solid-State Circuits, 1989
- Improved hot-carrier immunity in submicrometer MOSFETs with reoxidized nitrided oxides prepared by rapid thermal processingIEEE Electron Device Letters, 1989
- Inversion layer mobility of MOSFETs with nitrided oxide gate dielectricsIEEE Transactions on Electron Devices, 1988
- Optimization of low-pressure nitridation/reoxidation of SiO/sub 2/ for scaled MOS devicesIEEE Transactions on Electron Devices, 1988
- Advantages of thermal nitride and nitroxide gate films in VLSI processIEEE Transactions on Electron Devices, 1982