Anomalous effect of UHV-component-generated atomic hydrogen on the surface properties of ZnO

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Abstract
It is well known that atomic hydrogen can cause significant changes in surface conductivity of many semiconductors such as ZnO. We have found that some of the atomic hydrogen produced during the operation of ionization gauges, ion pumps, and titanium sublimators can reach ZnO samples even when the samples have no line of sight to these devices. Conductivity changes of many orders of magnitude are produced when the residual-gas background contains sufficient amounts of hydrogen. This effect must be considered when surface conductivity measurements are being made on materials such as ZnO.

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