ORIENTED GROWTH OF THE INTERFACIAL PtSi LAYER OR BETWEEN Pt AND Si

1 August 1967

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 11 (3) , 101-103
https://doi.org/10.1063/1.1755035

Abstract

The oriented growth of the interfacial PtSi layer between Pt and Si is described. Sputtered Pt onto the (111) Si wafer reacts with Si above 600°C to form PtSi. The interfacial PtSi has the preferred orientation characteristic of the temperature of heat treatment, varying the orientation from [101] at 600°C and 700°C, through [121] at 750°C, to [001] at 800°C. A possible growth mechanism of the interfacial PtSi is proposed on the basis of the atomic layer sequence of each crystallographic direction.

Keywords

HEAT TREATMENT

This publication has 1 reference indexed in Scilit:

Beam-Lead Technology
Bell System Technical Journal, 1966