Soft Failure Modes in MOS RAMS

• 1 April 1977
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE) in 8th Reliability Physics Symposium
• No. 07350791,p. 27-32
• https://doi.org/10.1109/irps.1977.362768

Abstract

Keywords

• READ-WRITE MEMORY
• RANDOM ACCESS MEMORY
• DRAM CHIPS
• TEMPERATURE
• VOLTAGE
• STRESS
• GAUSSIAN DISTRIBUTION
• INTEGRATED CIRCUIT NOISE
• MICROCOMPUTERS
• ERROR CORRECTION